Epitaxial graphene on SiC(0001): more than just honeycombs.
نویسندگان
چکیده
Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with hexagon-pentagon-heptagon (H(5,6,7)) defects that break the honeycomb symmetry, thereby inducing a gap and states below E(F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice, its interaction with the warped layer modifies )the dispersion about the Dirac point. These results explain recent angle-resolved photoemission and carbon core-level shift data and solve the long-standing problem of the interfacial structure of epitaxial graphene on SiC(0001).
منابع مشابه
The physics of epitaxial graphene on SiC(0001).
Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole,...
متن کاملStructural and electronic properties of epitaxial graphene on SiC(0001): A review of growth, characterization, transfer doping and hydrogen intercalation
Graphene, a monoatomic layer of graphite hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This article reviews the controlled growth of epita...
متن کاملMicro-Raman analysis of the influence of hydrogen intercalation on the epitaxial graphene grown on 4H-SiC(0001) substrate K.Grodecki
It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substr...
متن کاملTitle of Document : KELVIN PROBE MICROSCOPY STUDIES OF EPITAXIAL GRAPHENE ON
Title of Document: KELVIN PROBE MICROSCOPY STUDIES OF EPITAXIAL GRAPHENE ON SiC(0001). Alexandra Elizabeth Curtin, PhD., 2011 Directed By: Professor Michael S. Fuhrer, Department of Physics, Center for Nanophysics and Advanced Materials (Director) and the Materials Research Science and Engineering Center. Epitaxial graphene on SiC(0001) presents a promising platform for device applications and ...
متن کاملLocalized states influence spin transport in epitaxial graphene.
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing mono...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical review letters
دوره 105 8 شماره
صفحات -
تاریخ انتشار 2010